3BHB017688R001 | IGBT電源模塊 | SNAT607 MCI | NTAI06
型號：3BHB017688R001
類別：IGBT電源模塊
成色：全新/非全新
質(zhì)保：一年
快遞：順豐/德邦
IGBT電源模塊是電力電子領(lǐng)域中一種重要的功率半導體器件。以下是關(guān)于IGBT電源模塊的詳細介紹：
定義與組成：
IGBT(Insulated Gate Bipolar Transistor)即絕緣柵雙極型晶體管，是由BJT(雙極型三極管)和MOS(絕緣柵型場效應(yīng)管)組成的復合全控型電壓驅(qū)動式功率半導體器件。
3BHB017688R001 它兼有MOSFET的高輸入阻抗和GTR的低導通壓降兩方面的優(yōu)點。
工作原理：
當加在IGBT的柵極上的控制信號為高電平時，柵極與源極之間的耦合電容充電，導致柵極驅(qū)動電路通電。此時，柵極電壓高于臨界電壓，使得柵極P-N結(jié)反偏，進而阻斷P型區(qū)中的電流流動，IGBT處于關(guān)閉狀態(tài)。
當控制信號變?yōu)榈碗娖綍r，柵極與源極之間的電容開始放電，導致柵極電壓降低。當柵極電壓降低到臨界電壓以下時，柵極P-N結(jié)反向擊穿，來自上方的N型電子開始向下注入P型區(qū)，P型區(qū)中的電流開始流動，IGBT處于導通狀態(tài)。
應(yīng)用領(lǐng)域：
3BHB017688R001 IGBT模塊廣泛應(yīng)用于交流電源、電機驅(qū)動、逆變器等領(lǐng)域。
非常適合應(yīng)用于直流電壓為600V及以上的變流系統(tǒng)，如交流電機、變頻器、開關(guān)電源、照明電路、牽引傳動等領(lǐng)域。
優(yōu)點：
高效率：IGBT具有較低的導通電阻，可以實現(xiàn)高效率的功率調(diào)節(jié)。
高速開關(guān)：IGBT可在短時間內(nèi)完成開關(guān)操作，適用于高頻電路。
3BHB017688R001 | IGBT power module | SNAT607 MCI | NTAI06
Model: 3BHB017688R001
Category: IGBT power module
Finish: New/not new
Warranty: One year
Express: SF Express/Debon
IGBT power module is an important power semiconductor device in the field of power electronics. The following is a detailed introduction to the IGBT power module:
Definition and composition:
IGBT (Insulated Gate Bipolar Transistor) is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect tube).
3BHB017688R001 It has the advantages of both the high input impedance of MOSFET and the low on-voltage drop of GTR.
How it works:
When the control signal added to the gate of the IGBT is high voltage, the coupling capacitor between the gate and the source is charged, and the 3BHB017688R001 grid driver circuit is powered on. At this time, the gate voltage is higher than the critical voltage, which causes the P-N junction of the gate to reverse bias, thus blocking the current flow in the P-type region, and the IGBT is in the off state.
When the control signal becomes low, the capacitor between the gate and the source begins to discharge, resulting in a decrease in the gate voltage. When the grid voltage drops below the critical voltage, the P-N junction of the grid reverses, N-type electrons from above begin to inject downward into the P-type region, the current in the P-type region begins to flow, and the IGBT is in a conducting state.
Application field:
3BHB017688R001 IGBT module is widely used in AC power supply, motor driver, inverter and other fields.
Very suitable for DC voltage 600V and above converter system, such as AC motor, inverter, switching power supply, lighting circuit, traction drive and other fields.
Advantages:
High efficiency: The IGBT has a low on-resistance and can achieve high efficiency power regulation.
High-speed switch: IGBT can complete the switching operation in a short time, suitable for high-frequency circuits.
